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16- m-thick TBSBCCO lm In Figs 712c and d, the Tl1 a(Bi)aO layer is represented by T1 and the n-layers represent the number of in nite Can 1CunOy layers between two Ba1 b(Sr)bO layers Figures 712c and d show only one type of Tl1 a(Bi)aO layer (single layer) but several types of n-layers In these gures, n2 represents a CaCu2Oy layer between two Ba1 b(Sr)bO layers, which results into Tl-1212 in combination with T1; n3 represents a Ca2Cu3Oy layer between two Ba1 b(Sr)bO layers, which results in Tl-1223 in combination with T1; and n4 represents a Ca3Cu4O2 layer between two Ba1 b(Sr)bO layers, which results in Tl-1234 in combination with T1 In summary, Tl-1212 and Tl-1234 lm growth was observed along with Tl-1223 in the electrodeposited lms Ag was detected only on the surface of the processed lms, not in the substrate interface (Fig 7.

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12a), which indicates that even though Ag may initially help to enhance the melt growth phase formation, it eventually migrates to the surface of the partial-melting Tl-oxide superconducting oxide lms In almost all of these lms, BaCuOx phases were also observed as shown in Fig 712a Figure 712b shows clearly the magnitude of intergrowths in diffraction contrast images An X-ray energy-dispersive spectrometer attached to the microscope performed the qualitative analysis of Ag and BaCuOx 742 Electrodeposition of Bi Sr Ca Cu O The electrodeposited Bi2Sr2Ca1Cu2OX (BSCCO) precursor lms were obtained by co-electrodeposition of the constituent metals using nitrate salts dissolved in DMSO solvent The electrodeposition was performed in a closed-cell con guration at room temperature ( 24 C) The cation ratios of the electrodeposition bath were adjusted systematically to obtain BSCCO precursor compositions A typical electrolyte-bath composition for the BSCCO lms consisted of 2.

Summary

0-g Bi(NO3)3 5H2O, 10-g Sr(NO3)2, 06-g Ca(NO3)2 4H2O, and 09-g Cu(NO3)2 6H2O dissolved in 400 mL of DMSO solvent The substrates were single-crystal LAO coated with 300 of Ag The electrodeposited precursor lms were processed by the melt-quench/ melt-growth processing technique The comparison of omega-scan and phi-scan values obtained from ED Bi-2212 lms and pulsed-laser-deposited (PLD) Bi-2212 on LAO substrate showed a similar value or a slightly better value for the ED lm compared with the PLD lm on LAO The TEM analysis (Fig 713) of the ED Bi-2212 lms on LAO showed phase-pure Bi-2212 lm development The interface shown in Fig 713 between the LAO and the Bi-2212 phase of the processed lm is also very clean Only about 3% by volume stacking faults were observed in the lm At 4.

2 K and no magnetic eld, the reported critical current-density value of a 1- m-thick lm was 5 106 A/cm2 The electrodeposition process, therefore, produced high-quality biaxially textured Bi-2212 lms with promising critical current-density characteristics..

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a quarter or half wavelength The longest physical structures in a device or system are usually cables, which means they radiate at the lower frequencies Higher frequency problems (ie, >200 MHz) are typically enclosure related because the physical dimensions of slots are approaching a quarter or half wavelength for these higher frequencies (shorter wavelengths) Again using hand-held probes and a spectrum analyzer, one can locate, for example, leakage areas such as a display window or ventilation slots or a leaky joint between enclosure sections Apply fixes to the enclosure to reduce RF leakage or modify internal circuit boards to reduce the noise source The noise source could be a clock oscillator circuit After reducing the RF noise from the enclosure or PCB, remember to replace all the disconnected cables to verify that the cables are now not a secondary source of radiation.

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