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5.29 In the constant-base-current-biased ampli er of Fig. 3-13, VCC 15 V; RC 2:5 k ; RE 500 ; and RB 500 k . ICBO % 0 for the Si device. Find ICQ and VCEQ if (a) 100 and (b) 50. Ans: a 2:6 mA, 7.19 V; (b) 1.36 mA, 11.09 V Under what condition will the bias current ICQ of the ampli er in Fig. 3-14 be practically independent of Is this condition practical Ans. RB = ( RE . It is not practical, as a value of RB large enough to properly limit IBQ leads, through the condition, to a value of RE so large that it forces cuto .

PRINCIPLE 2: PRINCIPLE 3:

A1 A2 A3 A4 A5 A6 A7 A8 Complex Numbers Complex Plane Vector Operator j Other Representations of Complex Numbers Sum and Difference of Complex Numbers Multiplication of Complex Numbers Division of Complex Numbers Conjugate of a Complex Number

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The ampli er of Fig 5-13 uses a Si transistor for which ICBO % 0 Let VCC 15 V; RC 2:5 k , RE 500 , and RB 500 k (a) Find the value of the sensitivity factor S @ICQ =@ for 50 (b) Use S to predict ICQ when 100 Ans: a RB RE VCC VBEQ = RB 1 RE 2 ; (b) 265 mA (compare with the result of Problem 529) (a) Solve Problem 328(a) if 75 and all else is unchanged (b) Use the sensitivity factor found in Problem 510 to predict the change in ICQ when changes from 110 to 75 Ans: a ICQ 4:77 mA; b S 3:643 10 6 ; ICQ 0:127 mA In the shunt-feedback-biased ampli er of Fig.

The inclination i of a line is the angle above the x-axis that is included between the line and the positive direction of the x-axis (see Fig. 12-12). In the figure,

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3-17, VCC 15 V; RC 2 k ; RF 150 k ; ICEO % 0, and the transistor is a Si device (a) Find an expression for the sensitivity factor S (b) Use S to predict the change in quiescent collector current due to a change in from 50 to 100 Ans: a S RF RC VCC VBEQ = RF 1 RC 2 ; b S 3:432 10 5 ; ICQ 1:71 mA (compare with Example 54) In the CB ampli er of Fig 3-23, VCC 15 V; VEE 5 V; RE 3 k ; RC 7 k ; and 50 (a) Find an expression for the sensitivity factor S (b) Evaluate S assuming the transistor is a Si device Ans: a S VEE VBEQ = 1 2 RE ; b S 5:51 10 7 (very low sensitivity, but see Problem 58) The circuit of Fig.

B1 B2 B3 B4 B5 Simultenaneous Equations and the Characteristic Matrix Type of Matrices Matrix Arithmetic Determinant of a Square Matrix Eigenvalues of a Square Matrix

The slope is independent of the order in which the end points are selected. Thus, y2 x2 y1 x1 y1 x1 y2 x2

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Fig. 12-12

5-1 has the values given in Problem 511; assume that the initial values of ICBO and VBEQ are for 258C (a) Find an expression for the value of ICQ at any temperature T2 ! 258C if the transistor is a Si device (b) Evaluate the expression for ICQ at T2 1258C Ans: a ICQ b ICQ VBB 0:7 0:002 T2 25 0:5 10 6 RB RE 2 T2 25 =10 ; RB = RE 18:97 mA.

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